may 2009 1 mitsubishi high voltage diode module RM1200DB-66S high power switching use insulated type i f ................................................................ 1200a v rrm ...................................................... 3300v insulated type 2-element in a pack copper baseplate application tr action drives, high reliability converters / inverters, dc choppers RM1200DB-66S outline drawing & circuit diagram dimensions in mm high voltage diode module high voltage diode module circuit diagram (c) (c) k2 k1 (e) (e) a2 a1 label e cc cm e g e c k1 k2 a2 a1 6- 7 mounting holes 4-m8 nuts screwing depth min. 16.5 +1.0 0 38 57 0.25 57 0.25 20 40 124 0.25 18 5 15 29.5 130 61.5 140 >pps<
may 2009 2 mitsubishi high voltage diode module RM1200DB-66S high power switching use insulated type maximum ratings symbol item conditions unit ratings high voltage diode module high voltage diode module v rrm v rsm v r(dc) i f i fsm i 2 t v iso t j t op t stg repetitive peak reverse voltage non-repetitive peak reverse voltage reverse dc voltage dc forward current surge forward current current-squared, time integration isolation voltage junction temperature operating temperature storage temperature t j = 25 c t j = 25 c t j = 25 c t c = 25 c t j = 25 c start, t w = 8.3 ms half sign wave t j = 25 c start, t w = 8.3 ms half sign wave charged part to the baseplate rms sinusoidal, 60hz 1min. 3300 3300 2200 1200 9600 384 6000 ?0 ~ +150 ?0 ~ +125 ?0 ~ +125 v v v a a ka 2 s v c c c typ max electrical characteristics conditions limits note 1. it doesn't include the voltage drop by internal lead resistance. 2. e rec is the integral of 0.1v r x 0.1irr x dt. v rm = v rrm i f = 1200 a t j = 25 c t j = 125 c t j = 25 c t j = 125 c repetitive reverse current forward voltage (note 1) reverse recovery time reverse recovery current reverse recovery charge reverse recovery energy (note 2) 5 30 ma v s a c j/p 3 2.80 2.70 0.75 1600 850 0.75 i rrm v fm t rr i rr q rr e rec v r = 1650 v, i f = 1200 a di/dt = ?700 a/ s l s =100nh, t j = 125 c symbol item min unit
may 2009 3 mitsubishi high voltage diode module RM1200DB-66S high power switching use insulated type high voltage diode module high voltage diode module min typ max thermal characteristics symbol item conditions limits unit min typ max mechanical characteristics symbol item conditions limits unit r th(j-c) r th(c-f) junction to case (per 1/2 module) case to fin, grease = 1w/m? d (c-f) =100 m, (per 1/2 module) k/kw k/kw thermal resistance contact thermal resistance 18.0 16.0 m t m s m cti d a d s l p ce r cc?ee m8: main terminals screw m6: mounting screw t c = 25 c n? n? kg mm mm nh m ? mounting torque mass comparative tracking index clearance creepage distance internal inductance internal lead resistance 13.0 6.0 1.5 35 0.25 7.0 3.0 600 19.5 32 performance curves reverse recovery energy characteristics (typical) forward characteristics (typical) forward voltage v f (v) forward current i f (a) t j = 25 c t j = 125 c 0246 13 50 500 1500 1000 2000 2500 0 2500 2000 1500 1000 500 0 1.2 0.6 1.0 0.4 0.8 0.2 forward current i f (a) reverse recovery energy e rec (j/p) v r = 1650v, di/dt = 3700a/ s t j = 125 c, l s = 100nh
may 2009 4 mitsubishi high voltage diode module RM1200DB-66S high power switching use insulated type high voltage diode module high voltage diode module zr th( j ? ) ( t ) = n i=1 i 1?xp t i t ? ? ? ? r i [k/kw] i [sec] 1 0.0059 0.0002 2 0.0978 0.0074 3 0.6571 0.0732 4 0.2392 0.4488 forward current i f (a) reverse recovery characteristics (typical) normalized transient thermal impedance transient thermal impedance characteristics 0 0.2 0.4 0.6 0.8 1.0 1.2 time (s) 10 3 10 4 10 2 10 1 10 1 10 2 10 0 10 -1 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 10 -2 10 -3 23 57 10 -1 23 57 10 0 23 57 10 1 23 57 reverse recovery time t rr ( s) reverse recovery current i rr (a) reverse recovery current i rr (a) 10 3 10 2 23 57 10 4 23 5 447 reverse recovery safe operating area (rrsoa) reverse voltage v r (v) 0 1000 2000 1500 500 2500 3000 0 1000 3000 2000 4000 v r 2200v, di/dt 4800a/ s t j = 125 c i rr t rr r th(j?) = 18k/kw v r = 1650v, di/dt = 3700a/ s t j = 125 c, l s = 100nh
|
